Theses most similar to those of author Mertens, Samuel D. (Samuel David), 1975-
Electrical degradation of InAlAs/InGaAs metamorphic high electron mobility transistors (1999) read it
- Advisor: James E. Chung
- Department of Electrical Engineering and Computer Science
- Advisor: Leslie A. Kolodziejski
- Department of Electrical Engineering and Computer Science
The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
Greenberg, David Ross (1995)
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
Polyzoeva, Evelina Aleksandrova (2011)
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
Computer Science, fl. 2014-; Wu, Yufei. Department of Electrical Engineerin (2014)
- Advisor: Jesus A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
The hydrogen-induced piezoelectric effect in InP HEMTs (2003) read it
- Advisor: Akintunde Ibitayo (Tayo) Akinwande
- Department of Electrical Engineering and Computer Science
- Advisor: Leslie A. Kolodziejski
- Department of Electrical Engineering and Computer Science
Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
Polyzoeva, Evelina Aleksandrova (2011)
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
- Advisors: Eugene A. Fitzgerald; Raymond C. Ashoori
- Department of Physics
Enhancement of antimonide-based p-channel quantum-well field effect transistors using process-induced sprain
Guo, Luke (Luke W.) (2013)
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Investigation of mechanisms and influencing processing factors on mobility enhancement in strained Si n-MOSFETs
Xia, Guangrui, 1976- (2003)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
- Advisor: Tomás Palacios
- Department of Electrical Engineering and Computer Science
- Advisors: Dimitri A. Antoniadis; Judy L. Hoyt
- Department of Electrical Engineering and Computer Science