Theses most similar to those of author Saadat, Omair I

Self-aligned AlGaN/GaN transistors for sub-mm wave applications (2010) read it

Post assembly process development for Monolithic OptoPill integration on silicon CMOS

Lei, Yi-Shu Vivian, 1979- (2004)

  • Advisor: Clifton G. Fonstad, Jr.
  • Department of Electrical Engineering and Computer Science
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The AlInP material system in heterojunction bipolar transistor technology

Yüksel, Ayça (1994)

  • Advisor: Leslie A. Kolodziejski
  • Department of Electrical Engineering and Computer Science
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The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor

Greenberg, David Ross (1995)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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Carbon nanotube field effect transistors for power application

Pan, Ta (2007)

  • Advisors: Anantha P. Chandrakasan; Jing Kong
  • Department of Electrical Engineering and Computer Science
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Vertical profile engineering and reliability study of silicon-germanium heterojunction bipolar transistors

Liao, Kenneth S. (Kenneth Sen-Chun) (1996)

  • Advisor: L. Rafael Reif
  • Department of Electrical Engineering and Computer Science
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Electric field engineering in GaN high electron mobility transistors

Zhao, Xu (2007)

  • Advisor: Tomás Palacios
  • Department of Electrical Engineering and Computer Science
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InGaAs self-aligned HEMT for logic applications

Waldron, Niamh, 1974- (2007)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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Design and characterization of Si/SiGe heterostructure sub-100 nm bulk p-MOSFET

Lee, Jae-ky (2009)

  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
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Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching

Zheng, We (2016)

  • Advisor: Carl V. Thompson, II
  • Department of Materials Science and Engineering
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III-V vertical nanowire transistor for ultra-low power applications

Zhao, Xi (2017)

  • Advisor: Jesús A. del Alamo
  • Department of Materials Science and Engineering
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Processing technology for high quality AlGaN/GaN MOSHEMT interfaces (2015) read it

A high aspect-ratio silicon substrate-via technology and applications

Wu, Joyce H. (Joyce Hsia-Sing), 1974- (2000)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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Fabrication and simulation of CMOS-compatible photodiodes

DiLello, Nicole Ann (2008)

  • Advisor: Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science
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Electric field engineering in GaN high electron mobility transistors

Zhao, Xu (2007)

  • Advisor: Tomás Palacios
  • Department of Electrical Engineering and Computer Science
Read it

InGaAs self-aligned HEMT for logic applications

Waldron, Niamh, 1974- (2007)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
Read it

Design and characterization of Si/SiGe heterostructure sub-100 nm bulk p-MOSFET

Lee, Jae-ky (2009)

  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
Read it

Self-aligned AlGaN/GaN transistors for sub-mm wave applications

Saadat, Omair I (2010)

  • Advisor: Tomás Palacios
  • Department of Electrical Engineering and Computer Science
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Hydrogen degradation on InP HEMTs

Blanchard, Roxann Russell (1999)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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Fabrication technology for double-gate field effect transistors

Ritenour, Andrew P. (Andrew Paul), 1974- (1999)

  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
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Strained-Si technology for RF power LDMOSFET

Waldron, Niamh, 1974- (2002)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

Gao, Fen (2014)

  • Advisor: Tomás Palacios
  • Department of Materials Science and Engineering
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