Theses most similar to those of author Gomez, Leonard

Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm (2006) read it

  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
  • Advisor: Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science
  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
  • Advisor: Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science
  • Advisor: Tomás Palacios
  • Department of Electrical Engineering and Computer Science
  • Advisor: Jesús A. del Alamo
  • Department of Materials Science and Engineering
  • Advisors: Dimitri A. Antoniadis; Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science

Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain (2010) read it

  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
  • Advisor: Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science
  • Advisor: Eugene A. Fitzgerald
  • Department of Materials Science and Engineering
  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
  • Advisor: Eugene A. Fitzgerald
  • Department of Materials Science and Engineering
  • Advisor: Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science
  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
  • Advisor: Vladimir Bulović
  • Department of Electrical Engineering and Computer Science
  • Advisor: Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science
  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science