Theses most similar to those of author Åberg, Ingvar
Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator (2006) read it
Silicon-Germanium interdiffusion and its impacts on enhanced mobility MOSFETs
Xia, Guangrui, 1976- (2006)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Strained SiGe-channel p-MOSFETs : impact of heterostructure design and process technology
Ní Chléirigh, Cáit (2007)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain
Gomez, Leonard (2010)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques
Hashemi, Pouya (2010)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Lionel C. Kimerling
- Department of Materials Science and Engineering
- Advisors: Jurgen Michel; Lionel C. Kimerling
- Department of Materials Science and Engineering
Fundamental limits of the switching abruptness of tunneling transistors
Teherani, James Towfik (2015)
- Advisors: Dimitri A. Antoniadis; Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices
Albert, Brian Ross (2016)
- Advisors: Jurgen Michel; Lionel C. Kimerling
- Department of Materials Science and Engineering