Theses most similar to Hole mobility and effective mass in SiGe heterostructure-based PMOS devices (Tanasa, Corina E. (Corina Elena), 1976-; 2002) read it
Characterization of Schottky barrier carbon nanotube transistors and their applications to digital circuit design
Cline, Julia Van Meter, 1979- (2004)
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- Department of Electrical Engineering and Computer Science
The effects of strain on carrier transport in thin and ultra-thin SOI MOSFETs
Lauer, Isaac, 1976- (2005)
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
GeSi photodetectors and electro-absorption modulators for Si electronic-photonic integrated circuits
Liu, Jifen (2007)
- Advisor: Lionel C. Kimerling
- Department of Materials Science and Engineering
Modeling and characterization of thermoelectric properties of SiGe nanocomposites
Lee, Hohyun, 1978- (2009)
- Advisor: Gang Chen
- Department of Mechanical Engineering
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
Investigation of half-metallic ferromagnetism in NiMnSb spin dependent tunnel junctions
Tanaka, Clifford T. (Clifford Takashi) (1999)
- Advisors: Jagadeesh S. Moodera; Ronald M. Latanision
- Department of Materials Science and Engineering
- Advisor: Tomás Palacios
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Investigation of mechanisms and influencing processing factors on mobility enhancement in strained Si n-MOSFETs
Xia, Guangrui, 1976- (2003)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
- Advisor: Gang Chen
- Department of Mechanical Engineering