Theses most similar to Strained-Si technology for RF power LDMOSFET (Waldron, Niamh, 1974-; 2002) read it

InAlAs/InGaAs/InP HEMTs with pseudomorphic Schottky barriers

Lee, Kenneth Sunghwan (1994)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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The AlInP material system in heterojunction bipolar transistor technology

Yüksel, Ayça (1994)

  • Advisor: Leslie A. Kolodziejski
  • Department of Electrical Engineering and Computer Science
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Design and characterization of Si/SiGe heterostructure sub-100 nm bulk p-MOSFET

Lee, Jae-ky (2009)

  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
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AlGaN/GaN-based power semiconductor switches

Lu, Bi (2013)

  • Advisor: Tomás Palacios
  • Department of Electrical Engineering and Computer Science
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Enhancement of antimonide-based p-channel quantum-well field effect transistors using process-induced sprain

Guo, Luke (Luke W.) (2013)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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Design and fabrication of an RF power LDMOSFET on SOI

Fiorenza, James G. (James George), 1972- (2002)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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Fabrication of ultra-thin strained silicon on insulator

Drake, Tonya S. (Tonya Sue), 1978- (2003)

  • Advisor: Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science
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The hydrogen-induced piezoelectric effect in InP HEMTs

Mertens, Samuel D. (Samuel David), 1975- (2003)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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Deeply-scaled GaN high electron mobility transistors for RF applications

Lee, Dong Seup (2014)

  • Advisor: Tomás Palacios
  • Department of Electrical Engineering and Computer Science
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InGaAs/GaAsSb quantum-well Tunnel-FETs for ultra-low power applications

Yu, Ta (2016)

  • Advisors: Dimitri A. Antoniadis; Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science
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