Theses most similar to InGaAs/GaAsSb type-Il heterojunction vertical tunnel-FETs (Yu, Ta; 2013) read it

The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor

Greenberg, David Ross (1995)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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Carbon nanotube field effect transistors for power application

Pan, Ta (2007)

  • Advisors: Anantha P. Chandrakasan; Jing Kong
  • Department of Electrical Engineering and Computer Science
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Study of sub-0.5 [mega]-m SOI-with-active-substrate (SOIAS) technology for ultra-lower power applications

Yang, Isabel Y. (Isabel Ying) (1996)

  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
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InGaAs self-aligned HEMT for logic applications

Waldron, Niamh, 1974- (2007)

  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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Design and characterization of Si/SiGe heterostructure sub-100 nm bulk p-MOSFET

Lee, Jae-ky (2009)

  • Advisor: Dimitri A. Antoniadis
  • Department of Electrical Engineering and Computer Science
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Self-aligned AlGaN/GaN transistors for sub-mm wave applications

Saadat, Omair I (2010)

  • Advisor: Tomás Palacios
  • Department of Electrical Engineering and Computer Science
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Compressively strained Ge trigate p-MOSFETs

Chern, Winston (2012)

  • Advisor: Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science
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Superlattice-source nanowire FET with steep Subthreshold characteristics

Zhao, Xi (2012)

  • Advisor: Jesús A. del Alamo
  • Department of Materials Science and Engineering
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Fabrication of graphene-on-GaN vertical transistors

Zubair, Ahma (2014)

  • Advisors: Mildred S. Dresselhaus; Tomás Palacios
  • Department of Electrical Engineering and Computer Science
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InGaAs/GaAsSb quantum-well Tunnel-FETs for ultra-low power applications

Yu, Ta (2016)

  • Advisors: Dimitri A. Antoniadis; Judy L. Hoyt
  • Department of Electrical Engineering and Computer Science
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