Theses most similar to Modeling poly-silicon gate depletion in submicron MOS devices (Li, James Chingwei, 1975-; 1999) read it
- Advisor: Akintunde Ibitayo (Tayo) Akinwande
- Department of Electrical Engineering and Computer Science
Investigation of the electron transport and electrostatics of nanoscale strained Si/Si/Ge heterostructure MOSFETs
Nayfeh, Hasan M. (Hasan Munir), 1974- (2003)
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Leslie A. Kolodziejski
- Department of Electrical Engineering and Computer Science
Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm
Gomez, Leonard (2006)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
Polyzoeva, Evelina Aleksandrova (2011)
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
Enhancement of antimonide-based p-channel quantum-well field effect transistors using process-induced sprain
Guo, Luke (Luke W.) (2013)
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisors: Dimitri A. Antoniadis; Judy L. Hoyt
- Department of Electrical Engineering and Computer Science