Theses most similar to Impact of uniaxial strain on P-channel 111-V quantum-well field effect transistors (Xia, Lin; 2011) read it
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Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator
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Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm
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- Advisor: Judy L. Hoyt
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GeSi photodetectors and electro-absorption modulators for Si electronic-photonic integrated circuits
Liu, Jifen (2007)
- Advisor: Lionel C. Kimerling
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Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain
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Investigation of the tunneling emitter bipolar transistor as spin-injector into silicon
Van Veenhuizen, Marc Julien (2010)
- Advisors: Jagadeesh S. Moodera; Mildred S. Dresselhaus
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Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
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- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Modeling the effects of surface plasmon resonance on hot electron collection in a metallic-semiconductor photonic crystal device
Li, Xinha (2017)
- Advisor: Sang-Gook Kim
- Department of Mechanical Engineering
Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
Jayanta Joglekar, Sameer (2017)
- Advisor: Tomás Palacios
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