Theses most similar to Hole transport in strained SiGe-channel MOSFETs : velocity in scaled devices and mobility under applied mechanical strain (Gomez, Leonard; 2010) read it
The effects of strain on carrier transport in thin and ultra-thin SOI MOSFETs
Lauer, Isaac, 1976- (2005)
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
Strained SiGe-channel p-MOSFETs : impact of heterostructure design and process technology
Ní Chléirigh, Cáit (2007)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology
Dohrman, Carl Lawrence (2008)
- Advisor: Eugene A. Fitzgerald
- Department of Materials Science and Engineering
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science
In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
Cheng, Cheng-Wei, Ph.D (2010)
- Advisor: Eugene A. Fitzgerald
- Department of Materials Science and Engineering
Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques
Hashemi, Pouya (2010)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Study of organic molecules and nano-particle/polymer composites for flash memory and switch applications
Paydavosi, Sarah (2012)
- Advisor: Vladimir BuloviÄ
- Department of Electrical Engineering and Computer Science
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic
Chern, Winston (2017)
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science