Theses most similar to Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics (Jayaraman, Rajsekhar; 1988) read it
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Lochtefeld, Anthony Joseph, 1965- (2001)
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- Department of Electrical Engineering and Computer Science
Process development for a silicon planar resonant-tunneling field-effect transistor
Chou, Mike Chuan, 1969- (1994)
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- Department of Electrical Engineering and Computer Science
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- Department of Electrical Engineering and Computer Science
- Advisor: Leslie A. Kolodziejski
- Department of Electrical Engineering and Computer Science
Low pressure epitaxial growth, fabrication and characterizion of Ge-on-Si photodiodes
Olubuyide, Oluwamuyiwa Oluwagbemiga, 1979- (2007)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps
Tewksbury, Theodore L. (Theodore Locke) (1992)
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- Department of Electrical Engineering and Computer Science
Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
Chung, Jinwook W. (Jinwook Will) (2008)
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- Department of Electrical Engineering and Computer Science
Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
Polyzoeva, Evelina Aleksandrova (2011)
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- Department of Electrical Engineering and Computer Science
- Advisor: Tomás Palacios
- Department of Electrical Engineering and Computer Science
Prospects of germanium-based MOSFETs and tunnel transistors for low power digital logic
Chern, Winston (2017)
- Advisor: Dimitri A. Antoniadis
- Department of Electrical Engineering and Computer Science