Theses most similar to Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator (Åberg, Ingvar; 2006) read it
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Strained SiGe-channel p-MOSFETs : impact of heterostructure design and process technology
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- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
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- Advisor: Lionel C. Kimerling
- Department of Materials Science and Engineering
- Advisors: Jurgen Michel; Lionel C. Kimerling
- Department of Materials Science and Engineering
Fundamental limits of the switching abruptness of tunneling transistors
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Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices
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