Theses most similar to Effect of varying gate-drain distance on the RF power performance of pseudomorphic high electron mobility transistors (Wong, Melinda F; 2005) read it
- Advisor: James K. Roberge
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Dynamics of the kink effect in InAlAs/InGaAs/InP HEMTs
Ernst, Alexander N. (Alexander Nicolai) (1997)
- Advisor: Jesus A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Efficiency enhancement techniques for RF and millimeter wave power amplifiers
Ogunnika, Olumuyiwa Temitope, 1978- (2012)
- Advisor: Joel L. Dawson
- Department of Electrical Engineering and Computer Science
Electrical degradation of InAlAs/InGaAs metamorphic high electron mobility transistors
Mertens, Samuel D. (Samuel David), 1975- (1999)
- Advisors: Jesús A. del Alamo; Lawrence G. Studebaker
- Department of Electrical Engineering and Computer Science
- Advisors: James E. Chung; Paul J. Marcoux
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Investigation of noise sources in scaled CMOS field-effect transistors
Sepke, Todd C. (Todd Christopher), 1975- (2002)
- Advisors: Charles G. Sodini; Hae-Seung Lee
- Department of Electrical Engineering and Computer Science