Theses most similar to Effect of varying gate-drain distance on the RF power performance of pseudomorphic high electron mobility transistors (Wong, Melinda F; 2005) read it

  • Advisor: James K. Roberge
  • Department of Electrical Engineering and Computer Science
  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
  • Advisor: Jesus A. del Alamo
  • Department of Electrical Engineering and Computer Science
  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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  • Department of Electrical Engineering and Computer Science
  • Advisors: Jesús A. del Alamo; Lawrence G. Studebaker
  • Department of Electrical Engineering and Computer Science
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  • Department of Electrical Engineering and Computer Science
  • Advisor: Jesús A. del Alamo
  • Department of Electrical Engineering and Computer Science
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  • Department of Electrical Engineering and Computer Science