Theses most similar to Bias temperature instability (BTI) in GaN MOSFETs (Guo, Alex; 2016) read it
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Electrical degradation mechanisms of RF power GaAs PHEMTs
Villanueva, Anita A. (Anita Ariel), 1978- (2007)
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Dynamics of the kink effect in InAlAs/InGaAs/InP HEMTs
Ernst, Alexander N. (Alexander Nicolai) (1997)
- Advisor: Jesus A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: James E. Chung
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Electrical degradation of InAlAs/InGaAs metamorphic high electron mobility transistors
Mertens, Samuel D. (Samuel David), 1975- (1999)
- Advisors: Jesús A. del Alamo; Lawrence G. Studebaker
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science
Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
Computer Science, fl. 2014-; Wu, Yufei. Department of Electrical Engineerin (2014)
- Advisor: Jesus A. del Alamo
- Department of Electrical Engineering and Computer Science
- Advisor: Jesús A. del Alamo
- Department of Electrical Engineering and Computer Science