Theses most similar to Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices (Albert, Brian Ross; 2016) read it
- Advisor: Rajeev J. Ram
- Department of Electrical Engineering and Computer Science
- Advisor: Eugene A. Fitzgerald
- Department of Materials Science and Engineering
Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator
Åberg, Ingvar (2006)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Silicon-Germanium interdiffusion and its impacts on enhanced mobility MOSFETs
Xia, Guangrui, 1976- (2006)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Strained SiGe-channel p-MOSFETs : impact of heterostructure design and process technology
Ní Chléirigh, Cáit (2007)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices
Mori, Michael James (2008)
- Advisor: Eugene A. Fitzgerald
- Department of Materials Science and Engineering
Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques
Hashemi, Pouya (2010)
- Advisor: Judy L. Hoyt
- Department of Electrical Engineering and Computer Science
- Advisors: Jurgen Michel; Lionel C. Kimerling
- Department of Materials Science and Engineering
- Advisor: Tonio Buonassisi
- Department of Mechanical Engineering
Understanding defects in germanium and silicon for optoelectronic energy conversion
Patel, Neil Sunil (2016)
- Advisors: Anuradha M. Agarwal; Lionel C. Kimerling
- Department of Materials Science and Engineering